| PART |
Description |
Maker |
| SY88149HL11 SY88149HLMG SY88149HLMGTR SY88149HL10 |
3.3V 1.25Gbps Burst-Mode Limiting Amplifier with Ultra-Fast Signal Assert Timing
|
Micrel Semiconductor
|
| SY88933V06 SY88933VKG SY88933VKGTR SY88933VKITR SY |
3.3V/5V 1.25Gbps PECL LOW-POWER LIMITING POST AMPLIFIER WITH TTL SIGNAL DETECT
|
MICREL[Micrel Semiconductor]
|
| SY88149CL |
3.3V, 1.25Gbps PECL Limiting Post Amplifier w/High Gan TTL Signal Detect
|
Micrel Semiconductor
|
| MB82DBS04164E-70L |
64 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
|
IDT
Integrated Device Technology, Inc.
SRAM
|
| FTM-3012S-G20G FTM-3012S-GG |
1.0625垄娄1.25Gbps GBIC Transceiver
1.0625?.25Gbps GBIC Transceiver
|
Source Photonics, Inc.
|
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| XO-500-CFC-325E-155.52 XO-500-DFC-325E-155.52 XO-5 |
CRYSTAL OSCILLATOR, CLOCK, 177.7371 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 100 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 167.3316 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 155.52 MHz, PECL OUTPUT SMD, 6 PIN
CRYSTAL OSCILLATOR, CLOCK, 156.25 MHz, PECL OUTPUT SMD, 6 PIN
Crystal Clock Oscillators
CRYSTAL OSCILLATOR, CLOCK, 82.944 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 139.264 MHz, PECL OUTPUT
|
Vectron International, Inc.
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| SY100S811ZCTR SY100S811ZC SY100S811JC SY100S811 SY |
CAP 0.01UF 500V 10% X7R SMD-1210 TR-7
SINGLE SUPPLY 1:9 PECL/TTL-TO-PECL
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
