PART |
Description |
Maker |
IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
MCM63F733ATQ11 MCM63F733ATQ11R MCM63F733ATQ10 MCM6 |
128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
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CY7C1231H-133AXI CY7C1231H-133AXC |
2-Mbit (128K x 18) Flow-Through SRAM with NoBLArchitecture 2-Mbit (128K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
|
IS61NF25618-10BI IS61NF25618-8.5TQ IS61NF25618-8.5 |
128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
28C011TRT1FS 28C011TRPFS 28C011TRPFS-20 28C011TRPF |
1 Megabit (128K x 8-Bit) EEPROM 1兆位128K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 1兆位28K的8位)的EEPROM 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 CONNECTOR ACCESSORY POT 100K OHM THUMBWHEEL CERM ST
|
http:// NXP Semiconductors N.V. Maxwell Technologies, Inc
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IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
|
CY7C1231F-100AC CY7C1231F05 |
2-Mbit (128K x 18) Flow-through SRAM with NoBL Architecture 2-Mbit (128K x 18) Flow-through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
MCM63Z737 |
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM From old datasheet system
|
Motorola
|
MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的1864K的x 32/36流通过SYNCBURST的SRAM 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
|
CY7C1324H-133AXC CY7C1324H-133AXI |
2-Mbit (128K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
IS61NF25618-10TQ IS61NF25618-10B IS61NF25618-10TQI |
256K x 18 flow-through no wait state bus sram 128K x 32 flow-through no wait state bus sram 128K x 36 flow-through no wait state bus sram
|
Integrated Silicon Solution Inc
|