PART |
Description |
Maker |
GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
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http:// GSI Technology, Inc.
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8)启动块闪存系列 ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes 28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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http:// Intel, Corp. PROM Intel Corp. Intel Corporation
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HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
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SIEMENS AG
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BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
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BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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IS61VF25618A-6.5TQ IS61VF25618A-6.5B3 IS61VF12836A |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PQFP100 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PBGA165 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
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IS24L256-2PLI IS24L256-2PI IS24L256 IS24L256-2GI I |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc
|
IS24C128A-2PLI IS24C128A-2GLI IS24C256A-3WLA3 IS24 |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
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CYD09S72V CYD18S72V |
FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM(FLEx72 3.3V 64K/128K/256K x 72同步双端口RAM)
|
Cypress Semiconductor Corp.
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MX28F2100T 28F2100T |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY From old datasheet system
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Macronix 旺宏
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IS61NF25618-10BI IS61NF25618-8.5TQ IS61NF25618-8.5 |
128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
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Integrated Silicon Solution, Inc Integrated Silicon Solu...
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