| PART |
Description |
Maker |
| 4303.0182 4303.1093 4303.1003 4303.0032 4303.1031 |
Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 13A; Terminal Type: Quick Connect Tabs; 3 function: appliance inlet; fuseholder with interchangeable fuse drawer 10/13A, 250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| 13N50 |
Drain Current ID= 13A@ TC=25C
|
Inchange Semiconductor ...
|
| AOTF13N50 AOT13N50 |
500V, 13A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
| SMS840 |
0.13A , 50V , RDS(ON) 10 P-Channel Enhancement MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| HGTP2N120CN HGT1S2N120CNS HGTD2N120CNS |
13A/ 1200V/ NPT Series N-Channel IGBT
13A, 1200V, NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
|
| HGTP2N120CNS HGT1S2N120CN HGT1S2N120CNS HGTD2N120C |
13A, 1200V, NPT Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDS6679AZ |
P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm
|
Fairchild Semiconductor Corporation
|
| RQ3E130BN |
Nch 30V 13A Middle Power MOSFET
|
Rohm
|
| HY13N50FT HY13N50T |
500V / 13A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
