| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| THN405Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6601B |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6501 THN6501E THN6501Z THN6501U THN6501S |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| BFU510 |
NPN SiGe wideband transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NESG3031M14-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2101M16-T3-A NESG2101M16 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG3032M14-A |
S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG204619-T1-A NESG204619 NESG204619-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
