PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT450DA60G |
Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT100DU60TG |
Dual common source Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT450DU60G |
Dual common source Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM100GD120DN2 100D12N2 C67070-A2517-A67 |
From old datasheet system IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM35GD120D2 035D12D2 C67076-A2506-A17 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块(功率模相全桥包括快速滑行二极管 From old datasheet system
|
TE Connectivity, Ltd. SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|