| PART |
Description |
Maker |
| AP9412GI |
68 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT, TO-220CFM, 3 PIN
|
Advanced Power Electronics, Corp.
|
| AP85T03GS |
75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
|
Advanced Power Electronics, Corp.
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| STB70NF02L -STB70NF02L |
N-CHANNEL 20V - 0.006 OHM - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET N沟道20V 0.006欧姆-0A D2PAK封装，低栅极电荷STripFET功率MOSFET
|
STMicroelectronics N.V.
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| STK20N3LLH5 |
N-channel 30 V, 0.006 Ω, 20 A, PolarPAK? STripFET?V Power MOSFET
N-channel 30 V, 0.006 ヘ, 20 A, PolarPAK㈢ STripFET⑩V Power MOSFET
|
STMicroelectronics
|
| JANSF2N7470T1 JANSH2N7470T1 IRHMS57064 JANSG2N7470 |
45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
|
IRF[International Rectifier]
|
| AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram.
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
|
Atmel
|
| STL30NF3LL |
N-CHANNEL 30V 0.006 OHM 30A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| POT3107Z-1-200 POT3107Z-1-100 POT3107Z-1-104 POT31 |
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 250000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 25000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 12 TURN(S), 0.25 W, 50000 ohm
|
Murata Manufacturing Co., Ltd.
|
| TYM-200-10 TYM-500-10 TYM-100K-10 TYM-100-10 TYM-2 |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 2000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 50000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm
|
Vishay Intertechnology, Inc.
|
|
