| PART |
Description |
Maker |
| VFT30-28 ASI10703 VTF30-28 VFT3028 |
N-Channel Enhancement Mode VHF POWER MOSFET
VHF POWER MOSFET N-Channel Enhancement Mode
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| VFT1528 VFT15-2807 |
VHF POWER MOSFET
From old datasheet system
|
Advanced Semiconductor
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| MRF150 |
SILICON RF POWER MOSFET
From old datasheet system
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
ADVANCED SEMICONDUCTOR INC
|
| ASI10708 VFT30-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10704 VFT45-28 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
ASI[Advanced Semiconductor]
|
| ASI10709 VFT150-50 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
ASI[Advanced Semiconductor]
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| ARF465A ARF465B |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS
|
Advanced Power Technology
|
| VFT80-28 ASI10705 VFT8028 |
VHF POWER MOSFET N-Channel Enhancement Mode
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
