PART |
Description |
Maker |
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD 2.5V In-System Programmable SuperFAST?/a> High Density PLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
FCI2301 |
P-Channel High-Density Trench MOSFET
|
First Components Intern...
|
IDT82P2916 |
16-Channel High-Density T1/E1/J1 Line Interface Unit
|
Integrated Device Technology
|
MT4953 |
Dual P-Channel High Density Trench MOSFET
|
matrix microtech
|
PM5366 PM5366-PI |
HIGH DENSITY 84/63 CHANNEL VT/TU MAPPER AND M13 MULTIPLEXER
|
PMC-Sierra Inc
|
ISPLSI1016EA ISPLSI1016EA-100LJ44 ISPLSI1016EA-100 |
125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD In-System Programmable High Density PLD 200 MHz in-system prommable high density PLD
|
Lattice Semiconductor
|
ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40 High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44 High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44 High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40 High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
PM4332-PI |
HIGH DENSITY 32 CHANNEL T1/E1/J1 FRAMER Ultraframer DS3/E3/DS2/E2/DS1/E1/DS0
|
PMC-Sierra, Inc.
|