| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| 2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
|
|
| FQP6N90C FQPF6N90CT |
N-Channel QFET? MOSFET 900 V, 6.0 A, 2.3 Ω
|
Fairchild Semiconductor
|
| FQA11N90-F109 FQA11N90F109 |
N-Channel QFET? MOSFET 900 V, 11.4 A, 960 mΩ
|
Fairchild Semiconductor
|
| FCD900N60Z |
N-Channel SuperFETII MOSFET 600 V, 4.5 A, 900 m
|
Fairchild Semiconductor
|
| STD2NK90Z06 STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z |
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET
2.1 A, 900 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
STMicroelectronics
|
| 5N90G-TA3-T 5N90G-TF3-T 5N90L-TF3-T 5N90L-TA3-T |
5 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| SGL60N90DG3YDTU SGL60N90DG3M1TU SGL60N90DG3TUNL |
60 A, 900 V, N-CHANNEL IGBT, TO-264AA TO-264, 3 PIN
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
|
