PART |
Description |
Maker |
IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
|
CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1361C |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
CY7C1365C CY7C1365C-100AJXC CY7C1365C-100AJXI CY7C |
9-Mbit (256K x 32) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
CY7C1363C-100AJXC CY7C1363C-100AJXI CY7C1363C-100A |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
GS880Z36T-100 GS880Z36T-11I GS880Z36T-100I GS880Z3 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 11 ns, PQFP100 256K X 36 ZBT SRAM, 18 ns, PQFP100 TQFP-100
|
GSI Technology, Inc. http://
|
MT58L128L32F1 MT58L128V32F1 MT58L128V36F1 MT58L256 |
4MB: 256K X 18, 128K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
AS5SS256K36ADQ-8.5/883C AS5SS256K36DQ-8.5/883C AS5 |
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM
|
Austin Semiconductor
|
A67L83181E-11 A67L83181E-12 A67L83181E-10 |
256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
|
AMIC Technology
|
MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
IS61LF51218A-7.5TQI IS61LF25636A-6.5B3I IS61VF2563 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solution, Inc Integrated Silicon Solu...
|
IS61VF51218A IS61VF51218A-6.5B2 IS61VF51218A-6.5B2 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|