| PART |
Description |
Maker |
| CWB308 CWB308CP CWB308CY CWB309 CWB309CP CWB309CY |
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
|
CALOGIC[Calogic, LLC]
Calogic LLC
|
| BS250 |
DMOS Transistors (P-Channel)
DMOS Transistor (P-Channel)
|
GE Security, Inc.
GE[General Semiconductor]
|
| XSD314 SD312 SD314 SD310 SD314DE SD310DE SD312DE X |
High-Speed Analog N-Channel DMOS FETs Improved On -Resistance
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| IDT7133LA IDT7133SA IDT7143LA IDT7143SA IDT7133LA5 |
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS
2K x 16 Dual-Port RAM
HIGH SPEED 2K X 16 DUAL-PORT SRAM
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 90 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68
30V N-Channel Logic Level PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel 2K X 16 DUAL-PORT SRAM, 35 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, PQCC68
150V N-Channel UltraFET Trench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 25 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
INDUCT 22.8UH 4.9A 260KHZ KLIPMT 2K X 16 DUAL-PORT SRAM, 25 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CQFP68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 高2K × 16的CMOS双端口静态存储器
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQCC68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 70 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
400V N-Channel MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68
100V N-Channel Trench MOSFET 2K X 16 DUAL-PORT SRAM, 35 ns, CPGA68
HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN4440 |
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2341A |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2318SRG |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
|
