| PART |
Description |
Maker |
| SMBTA64 SMBTA63 |
Darlington Transistors - PNP Silicon Darlington Transistor with high collector current
PNP Silicon Darlington Transistors
|
INFINEON[Infineon Technologies AG]
|
| CMPTA64 CMPTA13 CMPTA14 CMPTA63 |
SMD Small Signal Transistor PNP Darlington
complementary silicon darlington transistors
|
Central Semiconductor Corp
|
| 2SB1214TP 2SB1214TP-FA 2SB1214 |
PNP Epitaxial Planar Silicon Transistor
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 3A I(C) | TO-251VAR
|
SANYO
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2N6286 2N6287 JANTXV2N6286 JANTXV2N6287 JANTX JANT |
PNP DARLINGTON POWER SILICON TRANSISTOR
PNP Darlington Transistor
|
MICROSEMI[Microsemi Corporation]
|
| BDX34D BDX34B-S |
PNP DARLINGTON 80V 10A 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns Inc.
Bourns, Inc.
|
| BDX34 BDX34D BDX34A BDX34B BDX34C |
PNP SILICON POWER DARLINGTONS
EMITTER IR 850NM T1 3/4
Transistor de puissance PNP darlington
|
Power Innovations International, Inc.
Power Innovations Limited
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
