PART |
Description |
Maker |
TGA2902-1-SCC-SG |
2 Watt Packaged Amplifier
|
TRIQUINT SEMICONDUCTOR INC
|
TGA2922-SG |
2 Watt 802.11a Packaged Amplifier
|
TriQuint Semiconductor
|
HMC482ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 5.0 GHz
|
Hittite Microwave Corporation
|
TGA2902-1-SCC-SG TGA2902-2-SCC-SG TGA2902-SCC-SG T |
2 Watt Packaged Amplifier 13000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TRIQUINT[TriQuint Semiconductor] TriQuint Semiconductor, Inc.
|
AWB459-17 |
Wide band MMIC Amplifie
|
Advanced Semiconductor ...
|
TGA8658-EPU-SG |
Packaged Ku-band HPA Ku Band 2W Packaged Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
OA2AA2720-R01 OA2A2720-R01 OA2AA2720-R010 OA2A2720 |
OPEN-AIR LOW VALUE CURRENT SHUNT RESISTORS 0.001Ω to 0.15Ω, 1 WATT to 5 WATT OPEN-AIR LOW VALUE CURRENT SHUNT RESISTORS 0.001惟 to 0.15惟, 1 WATT to 5 WATT OPEN-AIR LOW VALUE CURRENT SHUNT RESISTORS 0.001楼? to 0.15楼?, 1 WATT to 5 WATT OPEN-AIR LOW VALUE CURRENT SHUNT RESISTORS 0.001ヘ to 0.15ヘ, 1 WATT to 5 WATT
|
RCD COMPONENTS INC.
|
AM2964B/BQA AM2964B/BUA AM2964BPC AM2964BDMB AM296 |
3 Phase Driver, Inverting Input, 0.8us Deadtime in a 28-pin DIP package; A IR2132 packaged in a 28-Lead SOIC shipped on Tape and Reel 3 Phase Driver, Inverting Input, 2.5us Deadtime in a 28-pin DIP package; A IR2130 packaged in a 28-Lead PDIP Half Bridge Driver, Soft Turn-On, Separate High and Low Side Inputs, Fixed 500ns Deadtime in a 8-pin DIP package; A IR2108 packaged in a 8-Lead PDIP DRAM控制 3 Phase Driver, Inverting Input, 2.5us Deadtime in a 28-pin DIP package; A IR2130 packaged in a Lead-Free 28-Lead SOIC DRAM控制 Half Bridge Driver, SoftTurn-On, Noninverting Inputs in a 8-pin DIP package; A IR2304 packaged in a 8-Lead SOIC DRAM控制
|
NXP Semiconductors N.V.
|
1.5KE13CA 1.5KE110CA 1.5KE11CA 1.5KE130CA 1.5KE160 |
1500 Watt Mosorb Zener Transient Voltage Suppressors 1500 Watt mosorb zener transient voltage suppressors, 200V 1500 Watt mosorb zener transient voltage suppressors, 220V 1500 Watt mosorb zener transient voltage suppressors, 170V 1500 Watt mosorb zener transient voltage suppressors, 150V 1500 Watt mosorb zener transient voltage suppressors, 120V 1500 Watt mosorb zener transient voltage suppressors, 100V 1500 Watt Mosorb Zener Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE 1500 Watt mosorb zener transient voltage suppressors, 110V 1500 Watt mosorb zener transient voltage suppressors, 130V 1500 Watt mosorb zener transient voltage suppressors, 160V 1500 Watt mosorb zener transient voltage suppressors, 180V 1500 Watt mosorb zener transient voltage suppressors, 250V
|
http:// ONSEMI[ON Semiconductor]
|
CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306:PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|