| PART |
Description |
Maker |
| UB6006 |
N-Ch 60V Fast Switching MOSFETs
N-Ch 60V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| AMS3402 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| MAX1700/MAX1701 |
1-Cell to 3-Cell High-Power (1A) Low-Noise Step-uP DC-DC Conv
|
Maxim Integrated Products, Inc.
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2341A |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
