| PART |
Description |
Maker |
| EB201 EB201D |
High Cell Density MOSFETs Low On-Resistance Affords New Design Options
|
ONSEMI[ON Semiconductor]
|
| TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| MAX849 MAX848 MAX848ESE MAX848-MAX849 MAX849ESE |
1-Cell to 3-Cell, High-Power, Low-Noise, Step-Up DC-DC Converters 1节至3节电池，大功率，低噪声，升压型DC - DC转换
1-Cell-to-3-Cell, High-Power, Low-Noise, Step-Up DC-DC Converters
1-Cell to 3-Cell / High-Power / Low-Noise / Step-Up DC-DC Converters
|
Maxim Integrated Products, Inc.
Maixm
MAXIM - Dallas Semiconductor
|
| QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL306 |
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC
|
QuickLogic, Corp.
|
| LS26500 |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
saftbatteries
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3422A |
The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
