| PART |
Description |
Maker |
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRF1730G IRFI730G IRFI730GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)
Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)
|
IRF[International Rectifier]
|
| IRFI9634G |
-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
|
IRF[International Rectifier]
|
| IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A)
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A)
Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9540NSPBF IRF9540NLPBF IRF9540NSTRLPBF IRF9540N |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )
Advanced Process Technology
|
International Rectifier
|
| IRF6215LPBF IRF6215SPBF IRF6215RLPBF |
Advanced Process Technology
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29Ω , ID=-13A )
|
Vishay Siliconix
International Rectifier
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| IRLZ34NLPBF IRLZ34NSPBF |
Fast Switching
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035ヘ , ID = 30A )
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
|
International Rectifier
|
