| PART |
Description |
Maker |
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| TSPF5400 |
High Speed IR Emitting Diode in 5 mm (T-13/4) Package
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
From old datasheet system
High Speed IR Emitting Diode in ? 5 mm (T?1 3/4) Package
High Speed IR Emitting Diode in 酶 5 mm (T-13/4) Package
High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSFF5400 |
High Speed IR Emitting Diode in ? mm (T-13/4) Package
From old datasheet system
High Speed IR Emitting Diode in ? 5 mm (T?1 3/4)Package
|
Vishay Siliconix
|
| 200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS)
DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
|
ToshibaSemiconductor
Toshiba Semiconductor
|
| 1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| DCA010 |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Very High-Speed Switching Diode
From old datasheet system
|
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| CMPD415010 |
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
| SLD234VL |
High Power Laser Diode that Achieves High-Speed CD-R Recording
|
List of Unclassifed Manufacturers
|
| 1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage High Speed Switching Applications
|
TOSHIBA
|
