| PART |
Description |
Maker |
| DTD523YE09 |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB513ZM DTB513ZE |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| 2SC5053 |
Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA.
|
TY Semiconductor Co., L...
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| NSS30100LT1G |
30V, 2A, Low VCE(sat) PNP Transistor(30V,2A,低VCE(sat)，PNP型晶体管) 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
30 V, 2 A, Low Vce(sat) PNP Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| CMLM0405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
SMD Module NPN Low VCE(SAT) & Low VF Schottky Diode
|
CENTRAL[Central Semiconductor Corp]
|
