| PART |
Description |
Maker |
| DTD543XE DTD543XM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD523YE09 |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| ENN7483 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| NSS12500UW3T2G |
12 V, 8.0 A, Low VCE(sat) PNP Transistor(12V, 8.0A, 低VCE(sat) PNP晶体 5000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 12A02CH12 EN7482A EN7482 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single CPH3
Low-Frequency General-Purpose Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| HSD2118J |
LOW VCE(sat) TRANSISTOR (20V, 5A) 低Vce（sat）晶体管0V的，5A）条
|
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC
Hi-Sincerity Mocroelectronics
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
