| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| LMBTA14LT1 LMBTA13LT1 |
Darlington Amplifier Transistors 达林顿晶体管放大
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| 2SB895A |
Si PNP epitaxial planar darlington. AF amplifier.
|
Panasonic
|
| 2SD886A 2SD892 2SD892A |
Si NPN triple diffused planar. High hFE, AF power amplifier.
Si NPN epitaxial planar darlington. AF amplifier.
|
Panasonic
|
| NTE232 |
Silicon PNP Transistor Darlington Amplifier, Preamp
|
NTE[NTE Electronics]
|
| NTE245NPN NTE245 NTE246 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| SAP10N |
Darlington Transistor For Audio Amplifier With Temperature Compensation
|
Sanken
|
| 2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington)
|
ROHM
|
| MMBTA13LT1 MMBTA14LT1 ON2134 |
From old datasheet system
Darlington Amplifier Transistors(NPN Silicon)
|
http://
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola, Inc.
|
| HMC31510 315E HITTITEMICROWAVECORP-HMC315E |
GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz
|
Hittite Microwave Corporation
|
