PART |
Description |
Maker |
IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
|
MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
|
STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55 10A TRIACS 10A条双向可控硅 10A triac, 800V
|
SGS Thomson Microelectronics ST Microelectronics 意法半导 STMicroelectronics N.V.
|
FSS913A0R4 FSS913A0D FSS913A0D1 FSS913A0D3 FSS913A |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 10 A, 100 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
STB10NC50 STB10NC50-1 STB10NC50T4 |
10 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET N-CHANNEL 500V - 0.48 OHM - 10A - I2PAK/D2PAK POWERMESH MOSFET
|
STMICROELECTRONICS ST Microelectronics
|
IRF740 FN2311 |
10A/ 400V/ 0.550 Ohm/ N-Channel Power MOSFET From old datasheet system 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
RFD10P03LSM RFD10P03L FN3515 RFP10P03L |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET 10A 30V 0.200 Ohm Logic Level P-Channel Power MOSFET From old datasheet system
|
INTERSIL[Intersil Corporation]
|
SBA100-04J |
40V/ 10A Rectifier 40V 10A Rectifier Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
BLT31-H |
Standard : UL - IEC 300V-130V 10A - 10A
|
Eldeco Srl
|
MRD31-L |
Standard : UL - IEC 300V - 250V 10A - 10A
|
Eldeco Srl
|
HUF76609D3 HUF76609D3S HUF76609D3ST |
10A,100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|