PART |
Description |
Maker |
MRFIC1806 |
1.8 GHz DRIVER AMPLIFIER AND RAMP CIRCUIT GaAs MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator Integrated Circuit Low Noise Eqalizer Amp Integrated Circuit 2−Channel, Low Noise, Equalizier Amp Integrated Circuit TV Vertrical Deflection Circuit Silicon NPN Transistor
|
NTE[NTE Electronics]
|
UPG2311T5F UPG2311T5F-E2-A |
GAAS INTEGRATED CIRCUIT
|
California Eastern Labs
|
UPG2418TB-A UPG2418TB-E4-A UPG2418TB-EVAL-A |
GaAs Integrated Circuit 0.5 to 3.0 GHz SPDT Switch with 50 Ω Termination
|
Duracell Renesas Electronics Corporation
|
UPG2413T6Z-E2 UPG2413T6Z-E2-A |
GaAs Integrated Circuit SP3T Switch for BluetoothTM and 802.11b/g
|
Renesas Electronics Corporation
|
MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER (MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
UPG2185T6R-E2 UPG2185T6R-E2-A |
GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
|
Renesas Electronics Corporation
|
UPG2411T7C UPG2411T7C-E3 UPG2411T7C-E3-A |
GaAs Integrated Circuit SPDT Switch for 2 GHz to 6 GHz
|
Renesas Electronics Corporation
|
UPG2411T6R UPG2411T6R-E2-A |
GaAs Integrated Circuit SPDT Switch for 1 GHz to 8 GHz
|
Renesas Electronics Corporation
|
KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
PG2430T6Z-E2 |
GaAs Integrated Circuit SP3T Switch for Bluetooth? and 802.11a/b/g
|
Renesas Electronics Corporation
|
UPD784217AY UPD78F4216AYGC-8EU UPD78F4216AYGF-3BA |
MOS INTEGRATED CIRCUIT 马鞍山集成电 (UPD78F4216A / UPD78F4218A) MOS INTEGRATED CIRCUIT ER 1C 1#12 PIN PLUG
|
NEC, Corp. NEC Corp.
|