| PART |
Description |
Maker |
| 5962-8851804LX 5962-8851805LX |
512 x 8 Registered PROM
|
Cypress
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| X76F400V8G-2.5 X76F400S8G-2.5 |
512 X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, PLASTIC, TSSOP-8
512 X 8 FLASH 2.7V PROM, PDSO8 ROHS COMPLIANT, PLASTIC, SOIC-8
|
IC MICROSYSTEMS Sdn. Bhd.
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| AM27S31A |
512 x 8 Bipolar PROM
|
AMD
|
| 63RS881A 53RS881 53RS881A 63RS881 |
HIGH PERFORMANCE 1024 X 8 REGISTERED PROM
|
AMD[Advanced Micro Devices]
|
| D3624 D3624-4 D3624A D3624A-2 |
4K (512 x 8) HIGH-SPEED PROM
|
Intel Corp
|
| HM1-7620 HM1-7621 |
HIGH SPEED 512 X 4 PROM
|
Harris Semiconductor
Harris Corporation
|
| HM-7620 HM7620 HM7621 HM-7621 |
(HM-7621) High Speed 512 x 4 PROM
|
HARRIS[Harris Corporation]
|
| AM27S45A |
(AM27S45 / AM27S47 (A/SA)) 16384-Bit Bipolar Registered PROM
|
AMD
|
| SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
http://
Silicon Storage Technology, Inc.
|
