PART |
Description |
Maker |
IRFP460APBF |
SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27Ω , ID=20A ) SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27ヘ , ID=20A )
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International Rectifier
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IRFB23N15D IRFSL23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A) 150V,23A,SMPS MOSFET for High frequency DC-DC converters(150V,23A,开关电MOS场效应管,用于高DC-DC变换 50V3A条,开关电源的MOSFET的高频率DC - DC转换器(50V3A条,开关电源马鞍山场效应管,用于高频的DC - DC变换器)
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International Rectifier, Corp.
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IRF6217PBF IRF6217TRPBF IRF6217PBF-15 |
Reset Switch for Active Clamp Reset DC to DC converters SMPS MOSFET HEXFET?Power MOSFET SMPS MOSFET HEXFET㈢Power MOSFET
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International Rectifier
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SDN520C |
N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET
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SeCoS Halbleitertechnologie GmbH
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IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package 600V Single N-Channel HEXFET Power MOSFET in a I-Pak package SMPS MOSFET Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
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IRF[International Rectifier]
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S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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Spansion Inc. Spansion, Inc. SPANSION LLC
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IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A) Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.28ohm,身份证\u003d 7.9A
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IRF[International Rectifier] International Rectifier, Corp.
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IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Hexfet? Power MOSFET Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
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IRF[International Rectifier]
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S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
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IRFP2907 IRFP2907PBF |
Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A? Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A?) AUTOMOTIVE MOSFET Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A) 75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
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IRF[International Rectifier]
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IRFR014 IRFU014 IRFR014PBF IRFR014TR IRFR014TRL IR |
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
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IRF[International Rectifier]
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IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A ) HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A ) HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A ) 30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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International Rectifier
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