| PART |
Description |
Maker |
| GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216 |
30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GLT41016 |
64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
G-Link Technology
|
| KM416V1004A-L8 KM416V1004A-L6 KM416V1004A-F7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT 100万16位CMOS动态RAM的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM44C1005D |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD46128953F1-EB1 UPD46128953-X UPD46128953-E15X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
|
NEC
|
| K4E170411D K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out 4米4位的CMOS动态随机存储器的扩展数据输
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk 4米4位的CMOS动态随机存储器的扩展数据输
|
Bourns, Inc.
Samsung Semiconductor Co., Ltd.
|
| HY5117404C |
(HY5116404C / HY5117404C) Extended Data Out Mode
|
Hyundai Electronics
|
