| PART |
Description |
Maker |
| TS271 TS271CAC TS271CB TS271IAI TS271IBI TS271MAM |
PROGRAMMABLE LOW POWER CMOS SINGLE OP-AMP
CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MACH111SP MACH231-14JI/1 MACH131-14JI/1 MACH131-5J |
EMITTER IR 880NM 5MM SMD RADIAL
SUR ABSORBER 7MM 430V 1250A ZNR
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 14 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP100
High-Performance EE CMOS Programmable Logic EE PLD, 7.5 ns, PQCC68
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 10 ns, PQFP44
High-Performance EE CMOS Programmable Logic EE PLD, 12 ns, PQCC44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 15FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO INDUSTRIAL CAT6 PATCH CORD 5FT EE PLD, 18 ns, PQCC44
INDUSTRIAL TO RJ45 CAT6 PATCH CORD 20FT EE PLD, 15 ns, PQCC84
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQCC44
High-Performance EE CMOS Programmable Logic EE PLD, 15 ns, PQFP44
INDUSTRIAL TO RJ45 CAT5E PATCH CORD 20FT EE PLD, 18 ns, PQCC44
RES 3.32K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RJ45-DB9M (DTE)
Silver Mica Capacitor; Capacitance:62pF; Capacitance Tolerance: /- 5%; Series:CD15; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| DS123 XCF04SVOG20C XCF08PVOG48C XCF01SVOG20C XCF02 |
Platform Flash In-System Programmable Configuration PROMs
Low-Power Advanced CMOS NOR Flash Process
|
Xilinx, Inc
|
| AD73311 |
Low Cost, Low Power CMOS General Purpose Analog Front End Processor(浣?????浣?????CMOS???妯℃????澶????
|
Analog Devices, Inc.
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HN613256FP HN613256P HN613256 |
word x 8-bit CMOS Mask Programmable Read Only Memory
32768 word x 8 Bit CMOS Programmable ROM
|
Hitachi Semiconductor
Renesas Technology
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 5962-9471202MYX 5962-9471202MZX |
Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
|
Vicor, Corp.
|
| MC145109 MC145107 MC145112P MC145112 MC145109P MC1 |
CMOS LSI (LOW-POWER COMPLEMENTARY MOS) PLL FREQUENCY SYNTHESIZERS
CMOS MSI / Low Power Complementary MOS
|
MOTOROLA[Motorola, Inc]
|
