PART |
Description |
Maker |
1SS378 |
DIODE (HGIH SPEED SWITCHING)
|
Toshiba Corporation Toshiba Semiconductor
|
RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
RM50C1A-XXF RM50DA/CA/C1A-XXF RM50CA-XXF RM50DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
CMHD4150 |
SURFACE MOUNT HIGH SPEED SWITCHING DIODE 0.25 A, 50 V, SILICON, SIGNAL DIODE SURFACE MOUNT HIGH SPEED SWITCHING DIODE
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|
Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Siemens Semiconductor Group
|
HSU226 |
Diodes>Switching Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
BAR74 Q62702-F704 |
From old datasheet system Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
GBAV152 |
The GBAV152 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
BAW100 Q62702-A376 |
From old datasheet system Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp. Micro Commercial Components Corp.
|