| PART |
Description |
Maker |
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
| IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.27ohm，身份证\u003d 1.3a标准
Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF520L IRF520NSTRR IRF520NSTRL |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A)
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRF3710 IRF3710PBF |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条）
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9540N IRF9540 IRF9540NPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
|
IRF[International Rectifier]
|
| IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP
POWER MOSFET THRU-HOLE (MO-036AB)
100V Quad N-Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTORS
From old datasheet system
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| IRF540N IRF540NPBF |
Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 44mohm，身份证\u003d 33A条）
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FDD3690 |
100V N-Channel PowerTrench MOSFET
100V N-Channel PowerTrench MOSFET
DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
|
| FDP120N10 |
74 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼?
N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
