| PART |
Description |
Maker |
| RN2967 RN2969 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Toshiba Semiconductor
|
| RN4987FE |
TOSHIBA Transistor Silicon NPNPNP Epitaxial Type
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type
|
Toshiba Semiconductor
|
| 2SA2056 |
TOSHIBA Transistor Silicon PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2211 RN2210 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2209 RN2207 RN2208 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2313 RN2312 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2409 RN2407 RN2408 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN2310 RN2311 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2065 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| HN3B02FU |
TOSHIBA Transistor Silicon PNP⋅NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
