| PART |
Description |
Maker |
| FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU |
50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
|
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
|
| APT15D60KG APT15D60SA APT15D60SAG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 15; VR (V): 600; trr (nsec): 21; VF (V): 1.6; Qrr (nC): 520; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Microsemi Corporation
|
| APT75DQ60B APT75DQ60BG APT75DQ60S APT75DQ60SG |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 75; VR (V): 600; trr (nsec): 29; VF (V): 2; Qrr (nC): 650; 75 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| APT30D100SG APT30D100B APT30D100B_05 APT30D100BG A |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 1.9; Qrr (nC): 2350; 30 A, 1000 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 1000; trr (nsec): 29; VF (V): 1.9; Qrr (nC): 2350;
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| S204101N1199 SR204 S204100 S204101N1199A S204101N1 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
|
| UB8BT UF8BT UB8CT |
(UB8BT - UB8DT) Ultrafast Rectifier
(UF8BT - UF8DT) Ultrafast Rectifier
|
Vishay Siliconix
|
| 1N387907 1N3883R 1N3879R 1N381 1N382 1N3882R |
Fast Recovery Rectifier
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 400; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 50; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 300; trr (nsec): 200; VF (V): 1.4; IR (µA): 15;
|
Microsemi Corporation
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 1N3670 1N3670A 1N3670AR 1N2260 1N2260A 1N2246 1N22 |
Standard Rectifier (trr more than 500ns)
|
Microsemi
|
| JANTX1N3289 JANTX1N3289R JAN1N3295R |
Standard Rectifier (trr more than 500ns)
|
Microsemi
|
