| PART |
Description |
Maker |
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
SUPER LOW NOISE HJ FET
|
California Eastern Labs
|
| EPB018B5 EPB018B7 EPB018B9-70 |
Super Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
|
| NE425S01_98 NE425S01 NE425S01-T1 NE425S01-T1B NE42 |
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE3514S02-T1C NE3514S02-T1D |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE3503M04 NE3503M04-A NE3503M04-T2-A |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
CEL
California Eastern Labs
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
http://
NEC[NEC]
NEC Corp.
|
| FHX04LG FHX05LG FHX06LG |
Super Low Noise HEMT
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
N.A.
|
| FHC40LG |
Super Low Noise HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| 2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
