| PART |
Description |
Maker |
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1PS181 |
High-Speed Double Diode 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
| DCA010 |
0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Very High-Speed Switching Diode
From old datasheet system
|
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PACDN005SR PACDN005S/T PACDN005ST PACDN005QT PACDN |
APPLICATION SPECIFIC DIODE ARRAY|SO
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR
|
California Micro Devices Co...
California Micro Devices Corporation
|
| 1N914 |
High-speed diode
SMALL SIGNAL DIODE
|
Philips
General Semiconductor
|
