| PART |
Description |
Maker |
| NEZ1011-8E NEZ1414-8E |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| CLX27-05 CLX27-10 |
HiRel X-Band GaAs Power-MESFET
|
Infineon Technologies A...
|
| NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
ETC[ETC]
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NE8500202 NE8500295-8 NE85002 NE8500200 NE8500295- |
2 WATT C-BAND POWER GaAs MESFET
|
NEC[NEC]
California Eastern Labs
|
| NEZ1011-4E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET T-78, 2 PIN
|
NEC, Corp.
|
| CLX34-10 CLX34 CLX34-00 CLX34-05 |
HiRel X-Band GaAs Power-MESFET
伊雷X波段砷化镓功率场效应
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| AN-0002 |
Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers
|
ANADIGICS, Inc
|
| HMC637LP5 HMC637LP5E |
GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
