PART |
Description |
Maker |
NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET 200 mA, 2 W, K-band power GaAs MESFET 400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais) Panasonic Semiconductor
|
3SK166 3SK166A 3SK166A-0 3SK166A-2 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET 砷化镓N沟道双栅场效应晶体管
|
Sony Corporation Sony, Corp.
|
3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|