| PART |
Description |
Maker |
| SCM6946 MCM6946 |
512K x 8 Bit Static Random Access Memory
512K x 8 Bit Static Random Access Memory
512Kx8 Bit Static Random Access Memory(512Kx8位静态RAM)
|
Motorola, Inc.
|
| IDT70825S_L |
HIGH SPEED 128K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
|
IDT
|
| HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory
From old datasheet system
64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| 74LS189 74S189 |
64-BIT RANDOM ACCESS MEMORY
|
Fairchild Semiconductor
|
| MCM6229A-35 MCM6229A-20 MCM6229A-25 MCM6229A MCM62 |
256K X 4 BIT STATIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| 74F189PC 74F189SJ 74F189 74F189SC |
64-Bit Random Access Memory with 3-STATE Outputs
|
FAIRCHILD[Fairchild Semiconductor]
|
| K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM6729BWJ8R MCM6729B MCM6729BWJ10 MCM6729BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MCM101525 MCM101525B12 MCM101525B15 |
2M x 2 Bit Fast Static Random Access Memory with ECL I/O
|
MOTOROLA[Motorola, Inc]
|
| K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
