PART |
Description |
Maker |
FRM5W232HY |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector. 30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC CEL[California Eastern Labs]
|
ATV10GC-J28 ATV10GC ATV10GC-J57 |
10Gb/s surface mount coplanar APD preamp receiver with integrated MEMS VOA
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC[ETC]
|
NR4510UT-AZ |
InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER 铟镓砷APD.5千兆接收 s的内部预罗莎放大
|
California Eastern Laboratories, Inc.
|
FRM3Z231LT FRM3Z231KT |
InGaAs-PIN/Preamp Receiver Pin Preamplifier Modules
|
EUDYNA[Eudyna Devices Inc] FUJITSU
|
FRM3Z232BS FRM3Z232BS-A |
InGaAs-PIN/Preamp Preamp
|
Eudyna Devices Inc
|
G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
Hamamatsu Photonics K.K.
|