| PART |
Description |
Maker |
| GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
Dual Double Data Rate interface
72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8642ZV72 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS8640E18T-200IV GS8640E18T-250V GS8640E18T-200V G |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8644V18B-166 GS8644V18B-250 GS8644V18B-250I GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS8642Z18B-300 GS8642Z18B-300I GS8642Z18B-250 GS86 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8662D08E-XXX |
(GS8662DxxE-xxx) 72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI Technology
|
| GS8640Z36T-200 GS8640Z36T-300I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8642ZV36GB-250I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS8641V36 GS8641V18 GS8641V32 GS8641V32E-200IT |
2M X 32 CACHE SRAM, 7.5 ns, PBGA165
72Mb Burst SRAMs
|
GSI Technology
|
| GS8640V18T-250 GS8640V18T-300I GS8640V18T-167 GS86 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 5.5 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PQFP100
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
