PART |
Description |
Maker |
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
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Ericsson Microelectronics ERICSSON[Ericsson]
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SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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Toshiba Semiconductor
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SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation Toshiba, Corp. Toshiba Semiconductor
|
2SJ619 |
ZD-3.6V- 1 W TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV) Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
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Toshiba Corporation Toshiba Semiconductor Sanyo Semicon Device
|
2SK3403NBSP 2SK3403 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
SSM3K12T |
Field Effect Transistor Silicon N Channel MOS Type/Category DC-DC Converter High Speed Switching Applications CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category
|
TOSHIBA[Toshiba Semiconductor]
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