| PART |
Description |
Maker |
| APT20M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 112A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M22B2VFR |
POWER MOS V 200V 100A 0.022 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M42HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 50A 0.042 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M22B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 100A 0.022 Ohm
|
Advanced Power Technology, Ltd.
|
| APT20M22JVR APT20M22 |
From old datasheet system
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M34BLL APT20M34SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 200V 74A 0.034 Ohm
|
Advanced Power Technology, Ltd.
|
| ESM2030DF |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 300V V(BR)CEO | 67A I(C) 晶体管|晶体管电源模块|达林顿| 300V五（巴西）总裁|67A一（c
|
Electronic Theatre Controls, Inc.
|
| APT20M16LFLL APT20M16B2FLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 100A 0.016 Ohm
|
Advanced Power Technology Ltd.
|
| APT20M20JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 106A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
