| PART |
Description |
Maker |
| BGY282 |
dual band UHF amplifier module for GSM900 and GSM1800
|
Philips Semiconductors
NXP Semiconductors
|
| NE5510279A-T1 NE5510279A |
3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦，1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| PH1819-90 |
Wireless Power Transistor 90 Watts/ 1805-1880 MHz
Wireless Power Transistor 90 Watts, 1805-1880 MHz
|
MACOM[Tyco Electronics]
|
| PH1819-45 |
Wireless Bipolar Power Transistor 45W, 1805-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| SKY77336 |
Power Amplifier Module for Quad-Band GSM/GPRS/EDGE
|
Skyworks Solutions Inc.
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
