| PART |
Description |
Maker |
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMHD4448 |
HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
