| PART |
Description |
Maker |
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAV99 Q68000-A549 |
SILICON SWITCHING DIODE ARRAY (FOR HIGH-SPEED SWITCHING CONNECTED IN SERIES)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
