PART |
Description |
Maker |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
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Toshiba Semiconductor
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GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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BB804 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 18 V, SILICON, VARIABLE CAPACITANCE DIODE
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SIEMENS AG Siemens Semiconductor Group
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KV1471K KV1471KA KV1471KTR |
VARIABLE CAPACITANCE DIODE UHF BAND, 35.6 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
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TOKO, Inc. TOKO Inc TOKO[TOKO, Inc]
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HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
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Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
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BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 VHF variable capacitance double diodes 甚高频双可变电容二极
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PHILIPS[Philips Semiconductors] Philipss NXP Semiconductors N.V.
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1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
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Toshiba Corporation Toshiba Semiconductor
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BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
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1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE 47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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