| PART |
Description |
Maker |
| PCF35N08 |
N Channel Enhancement Mode Power Field Effect Transister Chip
|
General Electric Solid State
|
| EMT51 |
General purpose transister
|
ROHM
|
| EMZ51 |
General Purpose Transister (dual transistors)
|
Rohm
|
| S-AV17 E002849 |
RF POWER AMPLIFIER MODULE(HAM, VHF 50W FM RF POWER AMPLIFIER MODULE) 射频功率放大器模块（火腿，甚高频50瓦调频射频功率放大器模块
RF POWER AMPLIFIER MODULE(HAM/ VHF 50W FM RF POWER AMPLIFIER MODULE)
VHF 50W FM RF POWER AMPLIFIER MODULE HAM Application
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSM50GD120DN2G C67070-A2521-A67 050D12G2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM200GT120DN2 200T12N2 C67070-A2519-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（焊电源模块3相全桥包括快速滑行二极管
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGF100A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| APTGF150A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| APTGF150A60T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
