| PART |
Description |
Maker |
| 2SC4617T1G |
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| KTC3880 KTC3911 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER) 外延平面NPN晶体管（高频低噪声放大器，甚高频波段放大器）
EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
|
KEC Holdings
KEC(Korea Electronics)
|
| 2N5209 2N5210 ON0057 2N5209-D 2N5210RLRA 2N5209RLR |
Amplifier Transistors NPN Silicon
Ampllfler Translstor
From old datasheet system
Amplifier Transistors(NPN Silicon)
Amplifier Transistor NPN
|
ON Semiconductor
|
| MMBR5179LT1 |
RF AMPLIFIER TRANSISTOR NPN SILICON UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
|
Motorola Mobility Holdings, Inc.
|
| KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| CPH6001A |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Sanyo Semicon Device
|
| UPA800T UPA800T-T1 UPA800T-KB |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC[NEC]
|
| BD525 BD529 BD527 BD525-5 BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V.
NPN silicon annular amplifier transistor. 10 W, 60 V.
NPN SILICON AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
ETC
|
