PART |
Description |
Maker |
2SC3071 |
High-hFE/ Low-Frequency General-Purpose Amp Applications NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications NPN Epitaxial Planar Silicon Transistor for High hFE, Low-Frequency General-Purpose Amplifier Applications(高直流电流增益,低频通用放大器应用的NPN硅外延平面型晶体 瑞展硅晶体管HFE的高,低频通用放大器应用(高直流电流增益,低频通用放大器应用的npn型硅外延平面型晶体管
|
Sanyo Semicon Device Sanyo Electric Co., Ltd.
|
2SC3689 |
High-hFE, Low-Frequency, General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC3808 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
2SC3068 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
CSC1008Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
2SA1766 |
PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|