| PART |
Description |
Maker |
| 2SK3817 |
High Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| VEC2402 |
Medium Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH3322 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3316 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3829 |
High Output MOSFETs
|
SANYO
|
| 2SK3816 |
High Output MOSFETs
|
SANYO
|
| 2SK3702 |
High Output MOSFETs
DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| 4590R-223K 4590R-563K 4590R-823K 4590-682K 4590-68 |
INDUCTOR HIGH CURRENT 22.0UH 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 56.0UH 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 82.0UH 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 6.8UH 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High Current Filter Inductors
INDUCTOR HIGH CURRENT 5.6UH 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 1500UH 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 470.0UH 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 180.0UH 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 18000UH 1 ELEMENT, 18000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 680.0UH 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR AXIAL LEADED
INDUCTOR HIGH CURRENT 27000UH
1 ELEMENT, 15000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
API Delevan
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| CY2304NZ CY2304NZZC-1 CY2304NZZC-1T CY2304NZZI-1 C |
Four Output PCI-X and General Purpose Buffer 2304 SERIES, LOW SKEW CLOCK DRIVER, 4 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
|
