| PART |
Description |
Maker |
| 36-00029-07-C1 36-00029-07 |
IND COMMON MODE 110uH 60A
|
VICOR[Vicor Corporation]
|
| IMS05SH472J IMS05ST101K IMS05WDST101K40 IMS05RU680 |
General Fixed Inductor, IND,FERRITE,4.7MH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,100UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,68UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,6.8MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,1.2MH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,56UH,5% TOL,5% -TOL
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
General Fixed Inductor, IND,FERRITE,150UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,5% TOL,5% -TOL
General Fixed Inductor, IND,FERRITE,82UH,10% TOL,10% -TOL
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL
|
Vishay Dale
|
| SB100-09 |
90V/ 10A Rectifier
90V, 10A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| FDM3300NZ_07 FDM3300NZ |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| SBT100-10G |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 10A Rectifier
|
Sanyo Semicon Device
|
| SB100-09J |
90V, 10A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| ISC1812BN8R2K ISC1812ES4R7K ISC1812BN1R5J ISC1812E |
General Fixed Inductor, IND,POWDERED IRON,8.2UH,10% TOL,10% -TOL,1812 CASE
General Fixed Inductor, 1 ELEMENT, 4.7 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1812, HALOGEN FREE AND ROHS COMPLIANT
General Fixed Inductor, IND,POWDERED IRON,1.5UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,120UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,560UH,5% TOL,5% -TOL,1812 CASE
General Fixed Inductor, IND,FERRITE,270UH,10% TOL,10% -TOL,1812 CASE
General Fixed Inductor, IND,POWDERED IRON,22UH,5% TOL,5% -TOL,1812 CASE
ISC-1812 Wirewound, Surface Mount, Molded, Shielded Inductors
IND CHIP SHLD/MLD 330NH 5% 25.2MHZ 30Q-FCTR 394MA 1812 - Bulk
IND CHIP SHLD/MLD 150NH 20% 25.2MHZ 30Q-FCTR 491MA 1812 - Tape and Reel
General Fixed Inductor, IND,POWDERED IRON,10UH,10% TOL,10% -TOL,1812 CASE
|
Vishay Dale
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V
Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55
10A TRIACS 10A条双向可控硅
10A triac, 800V
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| PUMA2X0214I-9035 PUMA2X0214I-9045 PUMA2X0214I-9055 |
10MS, DIE, 1.8V, 9 MIL THICKNESS(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
8 ULTRA THIN,MINI MAP,PB/HALO FREE,IND T(SERIAL EE) 静态存储器/存储
10MS, 8 TSSOP, EXT TEMP, GREEN,2.7V(SERIAL EE) 静态存储器/存储
10MS, 8 SOIC, INT TEMP, GREEN, 1.8V(SERIAL EE) 静态存储器/存储
|
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Maxim Integrated Products, Inc.
|
|
