| PART |
Description |
Maker |
| APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
|
Microsemi Corporation
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| APT7F120B APT7F120S |
N-Channel FREDFET 1200V, 7A, 2.90楼? Max, trr 隆?190ns
N-Channel FREDFET 1200V, 7A, 2.90Ω Max, trr ?90ns
|
Microsemi Corporation
|
| APT26F120B2 APT26F120L |
N-Channel FREDFET 1200V, 26A, 0.65Ω Max, trr ?35ns
N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr ÷335ns
|
Microsemi Corporation
|
| IRF9540 IRF9540RF1S9540SM |
19A 100V 0.200 Ohm P-Channel Power MOSFETs(100.75 k) 9A 100V0.200欧姆P沟道功率MOSFET00.75十一
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
Electronic Theatre Controls, Inc.
Fairchild Semiconductor
|
| EP01C AP01C EP01 |
1000V,Fast-Recovery Rectifier Diodes(1000V,快速恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| STW18NK80Z_06 STW18NK80Z STW18NK80Z06 |
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH?/a> Power MOSFET
N-channel 800V - 0.34ヘ - 19A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| HUF75309D3 HUF75309D3S HUF75309P3 HUF75309D3ST HUF |
19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
|
Intersil
FAIRCHILD[Fairchild Semiconductor]
|
| LT1363CS8TRPBF |
70MHz, 1000V/µs Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO8
|
Linear Technology, Corp.
|
|
