| PART |
Description |
Maker |
| APT22F80B APT22F80S |
N-Channel FREDFET
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.43; BVDSS (V): 800; 23 A, 800 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| APT50M60L2VFR_04 APT50M60L2VFR APT50M60L2VFR04 APT |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ FREDFET
POWER MOS V? FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
|
| FAN2501S33 FAN2500S |
Pch Power MOSFET; Surface Mount Type: N; Package: TFP; R DS On (Ω): (max 0.12) (max 0.09); I_S (A): (max -18) 积极的固定电压稳压器
|
HIROSE ELECTRIC Co., Ltd.
|
| FAN1117A FAN1117AD FAN1117AS-3.3 FAN1117AS-5 FAN11 |
1.8 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PDSO4
From old datasheet system
Analog Video Front-End Processors; Function: 3in/1out component video switching and frequency detection; Features: YCbCr/RGB or D-pin, auto sync
FETs - Nch 150VFETs - Nch 150VFETs - Nch 150VFETs - Nch 60V<VDSS=150V; ; Package: TO-92MOD; R DS On (O): (max 0.95) (max 0.7); P D (W): (max 1) 积极的固定电压稳压器
|
FAIRCHILD SEMICONDUCTOR CORP
Yokogawa Electric, Corp.
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| TIP812-DOC-20 TIP812-TM-21 TIP812 TIP812-10 TIP812 |
SERCOS Controller SERCOS总线控制
RES 680 OHM 1% 3W SILICONE WW SERCOS总线控制
N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| AIDL9 AIDL45 AIDL5J SIDM17 SIDM13 HCMDL20 ACMDL20G |
Logic IC
10-Bit, 125Msps Low Noise 3V ADCs; Package: QFN; No of Pins: 32; Temperature Range: 0°C to 70°C
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±12); I_D Q1, max (mA): (max 500)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-10); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments
Frequency Switching Power Transistor; Application Scope: switching; Part Number: 2SA1736; H_FE: (min 120 @V_CE=2V, I_C=0.1A) (max 400 @V_CE=2V, I_C=0.1A)
Junction FETs (Single); Surface Mount Type: Y; Package: VESM2; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20)
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor; Application Scope: power amplification; Part Number: 2SA1241 逻辑IC
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 400) 逻辑IC
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA966 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 5) (max 30); I_DSS, max (mA): (min 25); |Yfs|, min (mS): (max -40) 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
|
Bourns, Inc.
ANADIGICS, Inc.
ITT, Corp.
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| FAN1587AM-1.5 FAN1587AMC-1.5 FAN1587AT-1.5 FAN1587 |
FETs - Nch 500VFETs - Nch 700VFETs - Nch 700VFETs - Nch 500V<VDSS=700V; ; Package: TO-220SIS; R DS On (Ω): (max 2.2); P D (W): (max 3.5) 积极的固定电压稳压器
|
Molex, Inc.
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
